Semiconductor device verifying signal supplied from outside

ABSTRACT

Disclosed herein is a semiconductor device that includes an access control circuit generating an internal command based on a verification result signal and an external command. The external command indicates at least one of a first command that enables the access control circuit to access a first circuit and a second command that enables the access control circuit not to access the first circuit or enables the access control circuit to maintain a current state of the first circuit. The access control circuit, when the verification result signal indicates a first logic level, generates the internal command based on the external command. The access control circuit, when the verification result signal indicates a second logic level, generates the internal command that corresponds to a second command even if the external command indicates a first command.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a Continuation Application of U.S. patentapplication Ser. No. 16/709,160 filed on Dec. 10, 2019, which is aContinuation Application of U.S. patent application Ser. No. 15/903,666filed on Feb. 23, 2018, which is a Continuation Application of U.S.patent application Ser. No. 15/403,531 filed on Jan. 11, 2017, which isa Continuation Application of U.S. patent application Ser. No.14/836,315 filed on Aug. 26, 2015, now U.S. Pat. No. 9,576,641, issuedon Feb. 21, 2017, which is a Continuation Application of U.S. patentapplication Ser. No. 14/295,231 filed on Jun. 3, 2014, now U.S. Pat. No.9,123,434, issued on Sep. 1, 2015, which is a Continuation Applicationof U.S. patent application Ser. No. 13/618,834 filed on Sep. 14, 2012,now U.S. Pat. No. 8,767,502, issued on Jul. 1, 2014, which is based onand claims priority from Japanese Patent Application No. 2011-212143,filed on Sep. 28, 2011, all of which are incorporated herein byreference in their entirety.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a semiconductor device and aninformation processing system including the same, and more particularlyto a semiconductor device that can verify whether a control signalsupplied from outside, such as a command signal, has proper logic and aninformation processing system including the same.

2. Description of Related Art

Semiconductor memory devices typified by a dynamic random access memory(DRAM) receive an address signal and a command signal supplied from acontroller, and access their memory cell array based on the signals.More specifically, an address signal supplied to a semiconductor memorydevice is latched into an address latch circuit, and memory cells to beaccessed are identified based on the address signal. A command signalsupplied to the semiconductor memory device is decoded by a commanddecoder, and an access type (whether the access is a read operation, awrite operation, etc.) is identified based on the command signal (seeJapanese Patent Application Laid-Open No. 2011-81893).

DDR4 (Double Data Rate 4) DRAMs have recently been proposed as DRAMseven faster than DDR3 (Double Data Rate 3) DRAMs. DDR4 DRAMs support anew function called “CA parity”. The CA parity refers to the function ofverifying whether an address signal and a command signal supplied from acontroller have proper logic. Such a function can be used to detectinversion of logic of bits constituting the address signal and thecommand signal, i.e., a parity error occurring during transmission ifany.

What processing to perform on the DRAM side in the event of a parityerror is important in view of improving the reliability of semiconductordevices in practical use. DRAMs that can perform appropriate processingin the event of a parity error are demanded. Such a demand is not onlyon DDR4 DRAMs but also on semiconductor devices in general that canverify control signals supplied from outside.

SUMMARY

In one embodiment, there is provided a semiconductor device thatincludes: an access control circuit generating an internal command basedon a verification result signal and an external command, the externalcommand including a first bit and a plurality of second bits suppliedfrom outside, the access control circuit including a verificationcircuit verifying the second bits of the external command to generatethe verification result signal; and a first circuit operating based onthe internal command supplied from the access control circuit. Theexternal command indicates at least one of a first command that enablesthe access control circuit to access the first circuit and a secondcommand that enables the access control circuit not to access the firstcircuit or enables the access control circuit to maintain a currentstate of the first circuit. The access control circuit, when theverification result signal indicates a first logic level, generates theinternal command based on the external command. The access controlcircuit, when the verification result signal indicates a second logiclevel, generates the internal command that corresponds to the secondcommand even if the external command indicates the first command.

In another embodiment, there is provided a semiconductor device thatincludes: a memory cell array that includes a plurality of memory cells;and an access control circuit that receives an address signal indicatingan address of at least one of the memory cells to be accessed and acommand signal indicating an access type, and accessing the memory cellarray based on the address signal and the command signal. The accesscontrol circuit includes a verification circuit that verifies theaddress signal and the command signal based on a verification signalsupplied from outside. The verification circuit stops accessing thememory cell array indicated by the command signal when the addresssignal or the command signal is determined to be erroneous.

In still another embodiment, there is provided an information processingsystem that includes: a semiconductor device that includes a memory cellarray including a plurality of memory cells; and a controller thatcontrols the semiconductor device. The controller includes an outputcircuit that supplies an address signal indicating an address of atleast one of a memory cells to be accessed, a command signal indicatingan access type, and a verification signal generated based on the addresssignal and the command signal to the semiconductor device. Thesemiconductor device includes an access control circuit that accessingthe memory cell array based on the address signal and the commandsignal. The access control circuit includes a verification circuit thatverifies the address signal and the command signal based on theverification signal. The verification circuit stops accessing the memorycell array indicated by the command signal when the address signal orthe command signal is determined to be erroneous.

In still another embodiment, there is provided a semiconductor devicethat includes: a verification circuit configured to receive a commandsignal, an address signal and a parity signal and output an error signalwhen detecting that at least one of the command signal and the addresssignal includes an error; and a parity latency circuit including a firstlatch chain receiving a chip select signal, a second latch chainreceiving the command signal, a third latch chain receiving the addresssignal, and a fourth latch chain receiving the parity signal, the paritylatency circuit further including a logic gate inserted in the firstlatch chain and receiving the error signal.

According to the present invention, access to internal circuits such asthe memory cell array is stopped when a so-called parity error or otherdefect is detected. This avoid data destruction due to execution of anerroneous command, and overwriting of data to an erroneous address. Thereliability of the semiconductor device in practical use can thus beimproved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram for explaining the principle of an embodiment;

FIG. 2 is an example of a truth table for explaining an operation of acommand decoder shown in FIG. 1;

FIG. 3 is a block diagram indicative of an embodiment of a semiconductordevice 10 a according to a preferred first embodiment of the presentinvention and mainly shows details of circuit blocks belonging to anaccess control circuit shown in FIG. 1;

FIG. 4 is a circuit diagram for explaining the function of averification circuit shown in FIG. 3;

FIG. 5 is a circuit diagram indicative of an embodiment of a paritylatency circuit shown in FIG. 3;

FIG. 6A is a timing chart for explaining the operation of thesemiconductor device shown in FIG. 3 in the parity OFF mode;

FIG. 6B is a timing chart for explaining the operation of thesemiconductor device shown in FIG. 3 in the parity ON mode;

FIG. 7 is a block diagram indicative of an embodiment of a semiconductordevice 10 b according to a second preferred embodiment of the presentinvention and mainly shows details of circuit blocks belonging to theaccess control circuit 20 shown in FIG. 1;

FIG. 8 is a circuit diagram of a CA latency circuit shown in FIG. 7;

FIG. 9 is a circuit diagram indicative of an embodiment of a receivercontrol circuit shown in FIG. 7;

FIG. 10 is a truth table for explaining the operation of a selectorshown in FIG. 7;

FIG. 11 is a timing chart for explaining the operation of thesemiconductor device 10 b according to the second embodiment and showsoperations when the CALOFF mode and the parity OFF mode are set;

FIG. 12 is a timing chart for explaining the operation of thesemiconductor device 10 b according to the second embodiment and showsoperations when the CALON mode and the parity OFF mode are set;

FIG. 13 is a timing chart for explaining the operation of thesemiconductor device 10 b according to the second embodiment and showsoperations when the CALOFF mode and the parity ON mode are set;

FIG. 14 is a timing chart for explaining the operation of thesemiconductor device 10 b according to the second embodiment and showsoperations when the CALON mode and the parity ON mode are set;

FIG. 15 is a block diagram indicative of an embodiment of asemiconductor device 10 c according to a third preferred embodiment ofthe present invention and mainly shows details of circuit blocksbelonging to the access control circuit 20 shown in FIG. 1;

FIG. 16 is a circuit diagram indicative of an embodiment of a paritylatency circuit shown in FIG. 16;

FIG. 17 is a circuit diagram indicative of an embodiment of a CA latencycircuit shown in FIG. 16;

FIG. 18 is a truth table for explaining the operation of a selectorshown in FIG. 16;

FIG. 19 is a timing chart for explaining the operation of thesemiconductor device 10 c according to the third embodiment and showsoperations when the CALOFF mode and the parity OFF mode are set;

FIG. 20 is a timing chart for explaining the operation of thesemiconductor device 10 c according to the third embodiment and showsoperations when the CALON mode and the parity OFF mode are set;

FIG. 21 is a timing chart for explaining the operation of thesemiconductor device 10 c according to the third embodiment and showsoperations when the CALOFF mode and the parity ON mode are set;

FIG. 22 is a timing chart for explaining the operation of thesemiconductor device 10 c according to the third embodiment and showsoperations when the CALON mode and the parity ON mode are set; and

FIG. 23 is a circuit diagram indicative of an embodiment of a paritylatency circuit 100 d used in a fourth embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE EMBODIMENT

A representative example of the technical concept of an embodiment ofthe present invention for solving the problem will be described below.It will be understood that what the present invention claims are notlimited to such a technical concept but set forth in the claims of thepresent invention. More specifically, the technical concept of thepresent embodiment includes verifying an address signal and a commandsignal based on a verification signal, and stopping an access to thememory cell array, indicated by the command signal, if the addresssignal or the command signal is determined to be erroneous. As employedherein, the stopping refers to converting an access type indicated bythe command signal into a different access type. Examples of thedifferent access type include a DESEL command and a NOP command. Methodsfor stopping an access include forcefully deactivating a chip selectsignal to disable the access itself (corresponding to a DESEL command)and forcefully converting the content of the command into a NOP (nooperation) command. This prevents the subsequent circuits frommalfunctioning (if a subsequent circuit is a memory cell, from datadestruction or from overwriting data to an erroneous address) due to theexecution of an erroneous command even if a parity error or other defectis detected.

Referring now to FIG. 1, an information processing system including acontroller 50 and a semiconductor device 10 is shown. The semiconductordevice 10 shown in FIG. 1 is a semiconductor memory device such as aDRAM. The semiconductor device 10 includes a memory cell array 11. Thememory cell array 11 includes a plurality of word lines WL and aplurality of bit lines BL which intersect each other. Memory cells MCare arranged at the intersections. The word lines WL are selected by arow decoder 12. The bit lines BL are selected by a column decoder 13.The bit lines BL are connected to respective corresponding senseamplifiers SA in a sense circuit 14. Bit lines BL selected by the columndecoder 13 are connected to an amplifier circuit 15 through senseamplifiers SA.

The operation of the row decoder 12, the column decoder 13, the sensecircuit 14, and the amplifier circuit 15 is controlled by an accesscontrol circuit 20. An address signal ADD, a command signal CMD, a chipselect signal CS, and a verification signal PRTY are supplied to theaccess control circuit 20 through terminals 21 to 24. Based on suchsignals, the access control circuit 20 controls the row decoder 12, thecolumn decoder 13, the sense circuit 14, the amplifier circuit 15, and adata input/output circuit 30. In the present embodiment, the circuitblocks that are controlled by the access control circuit 20, forexample, the memory cell array 11, the row decoder 12, the columndecoder 13, the sense circuit 14, the amplifier circuit 15, the datainput/output circuit 30, and the like, may be referred to as a “firstcircuit”. Further, a bit used as the chip select signal CS may bereferred to as a “first bit”, and a plurality of bits that constitutethe command signal CMD may be referred to as “second bits” in thepresent embodiment.

Specifically, if the command signal CMD is an active command, theaddress signal ADD is supplied to the row decoder 12. In response tothis, the row decoder 12 selects a word line WL that is designated bythe address signal ADD, whereby corresponding memory cells MC areconnected to respective bit lines BL. The access control circuit 20 thenactivates the sense circuit 14 at predetermined timing.

On the other hand, if the command signal CMD is a read command or awrite command, the address signal ADD is supplied to the column decoder13. In response to this, the column decoder 13 connects bit lines BLdesignated by the address signal ADD to the amplifier circuit 15.Consequently, in a read operation, read data DQ read from the memorycell array 11 through sense amplifiers SA is output from a data terminal31 to outside through the amplifier circuit 15 and the data input/outputcircuit 30. In a write operation, write data DQ supplied from outsidethrough the data terminal 31 and the data input/output circuit 30 iswritten to memory cells MC through the amplifier circuit 15 and senseamplifiers SA.

As shown in FIG. 1, the access control circuit 20 includes an addresslatch circuit 80 a, a command decoder 80 b, and a verification circuit90.

The address latch circuit 80 a is a circuit that latches the addresssignal ADD supplied through the address terminal 21. As described above,the address signal ADD latched in the address latch circuit 80 a issupplied to the row decoder 21 or the column decoder 13 depending on thecontent of the command signal CMD.

The command decoder 80 b is a circuit that decodes the command signalCMD supplied through the command terminal 22. The command signal CMDincludes, though not limited to, a plurality of bits of control signalsincluding an active signal ACT, a row address strobe signal RAS, acolumn address strobe signal CAS, and a write enable signal WE. Accesstypes are defined by the combinations of the logic levels of suchsignals. Examples of the access types include a row access based on anactive command, a read access based on a read command, a write accessbased on a write command, and a status quo operation based on a NOPcommand.

Turning to FIG. 2, in this example, combinations of the chip selectsignal CS and the command signal CMD produce internal commands includinga DESEL command, the NOP command, an active command IACT, a prechargecommand IPRE, a write command IWR1, a read command IRD1, and a moderegister setting command MRS.

The DESEL command is a command that is generated when the chip selectsignal CS is in an inactive state. When the DESEL command is issued, theaccess control circuit 20 performs no access operation. The NOP commandis a command that is generated when the chip select signal CS is in anactive state and all the bits of the command signal CMD are at a lowlevel. Again, when the NOP command is issued, the access control circuit20 performs no access operation.

When the active command IACT, the write command IWR1, and the readcommand IRD1 are issued, the access control circuit 20 performs theforegoing operations to make a row access, a write access, and a readaccess, respectively. The precharge command IPRE is a command fordeactivating the memory cell array 11 which has been activated by theactive command IACT. The mode register setting signal MRS is an internalcommand for rewriting a set value of the mode register described later.

The address latch circuit 80 a and the command decoder 80 b areactivated based on the chip select signal CS supplied through the chipselect terminal 23. If the chip select signal CS is in an inactivestate, the address latch circuit 80 a and the command decoder 80 b arealso deactivated. In such a case, the input address signal ADD andcommand signal CMD are disabled. In the present embodiment, the inactivestate of the chip select signal CS may also be considered as a kind ofcommand and referred to as a DESEL command. When a DESEL command isissued, the access control circuit 20 performs no access operation. Thisprovides the same result as when a NOP command is issued.

The verification circuit 90 is a circuit that verifies the addresssignal ADD and the command signal CMD based on the verification signalPRTY supplied through the verification terminal 24. The verificationmethod is not limited in particular. Preferred examples include a methodof determining whether the number of high-level (or low-level) bitsincluded in a plurality of bits constituting the address signal ADD andthe command signal CMD is an even number or an odd number, and collatingthe determination with the verification signal PRTY. In such a case, theverification signal PRTY corresponds to a so-called parity bit, whichmay consist of only one bit.

The foregoing circuit blocks operate with respective predeterminedinternal voltages as their power supply. The internal power supplies aregenerated by a power supply circuit 40 shown in FIG. 1. The power supplycircuit 40 receives an external potential VDD and a ground potential VSSsupplied through power supply terminals 41 and 42, respectively. Basedon the potentials, the power supply circuit 40 generates internalvoltages VPP, VPERI, VARY, etc. The internal potential VPP is generatedby boosting the external potential VDD. The internal potentials VPERIand VARY are generated by stepping down the external potential VDD.

The internal voltage VPP is a voltage that is mainly used in the rowdecoder 12. The row decoder 12 drives a word line WL that is selectedbased on the address signal ADD to the VPP level, thereby making thecell transistors included in memory cells MC conducting. The internalvoltage VARY is a voltage that is mainly used in the sense circuit 14.The sense circuit 14, when activated, drives either one of each pair ofbit lines to the VARY level and the other to the VSS level, therebyamplifying read data that is read out. The internal voltage VPERI isused as the operating voltage of most of the peripheral circuits such asthe access control circuit 20. The use of the internal voltage VPERIlower than the external voltage VDD as the operating voltage of theperipheral circuits reduces the power consumption of the semiconductordevice 10.

Now, the controller 50 includes an output circuit 60 and a dataprocessing circuit 70. The output circuit 60 is a circuit for supplyingthe address signal ADD, the command signal CMD, the chip select signalCS, and the verification signal PRTY to the semiconductor device 10through terminals 61 to 64. The data processing circuit 70 is a circuitthat processes read data DQ and write data DQ input/output through adata terminal 71.

When accessing the semiconductor device 10, the controller 50 activatesthe chip select signal CS and supplies the address signal ADD and thecommand signal CMD. The controller 50 also supplies the verificationsignal PRTY that is generated based on the address signal ADD and thecommand signal CMD. The verification signal PRTY is generated by averification signal generation circuit 60 a. Suppose that theverification signal PRTY is a parity bit. If the number of high-levelbits included in the plurality of bits constituting the address signalADD and the command signal CMD is an even number, the verificationsignal generation circuit 60 a sets the verification signal PRTY to alow level. If the number of high-level bits is an odd number, theverification signal generation circuit 60 a sets the verification signalPRTY to a high level. In other words, the plurality of bits constitutingthe address signal ADD, the command signal CMD, and the verificationsignal PRTY always include an even number of high-level bits. The timingfor the controller 50 to supply the chip select signal CS, the addresssignal ADD, the command signal CMD, and the verification signal PRTY tothe semiconductor 10 is not limited in particular. All the signals maybe simultaneously supplied. The chip select signal CS may be issuedalone in advance, followed by the issuance of the adders signal ADD, thecommand signal CMD, and the verification signal PRTY after a lapse ofpredetermined time.

Each time the controller 50 accesses the semiconductor device 10, theverification circuit 90 included in the semiconductor device 10 verifiesthe address signal ADD and the command signal CMD. If the verificationresult shows that the address signal ADD and the command signal CMDinclude no defect, the verification circuit 90 allows the commanddecoder 80 b to perform a decoding operation on the command signal CMD.Consequently, an access operation selected by the command signal CMD isperformed. In the present embodiment, a command for making an effectiveaccess to the memory cell array 11 may be referred to as a “firstcommand”.

On the other hand, if the verification result shows that the addresssignal ADD or the command signal CMD include a defect, the verificationcircuit 90 controls the command decoder 80 b so that the command decoder80 b performs the same operation as in the case where a DESEL command ora NOP command is issued. In the present embodiment, a command for makingno access to the memory cell array 11 or maintaining the state of thememory cell array 11 may be referred to as a “second command”.

The case where a DESEL command is issued refers to that the chip selectsignal CS is in an inactive state. To make the command decoder 80 bperform the same operation as in the case where a DESEL command isissued, the chip select signal CS supplied from outside may beforcefully converted inside from an active state into an inactive state.The case where a NOP command is issued refers to that the chip selectsignal CS is in an active state and a combination of command signals CMDindicates a NOP command. To make the command decoder 80 b perform thesame operation as in the case where a NOP command is issued, thecombination of command signals CMD supplied from outside may beforcefully converted inside into that of a NOP command.

For example, suppose a bit is inverted during transmission of theaddress signal ADD and the command signal CMD from the controller 50 tothe semiconductor device 10. In such a case, the verification circuit 90detects the error, and the command is converted into a DESEL command ora NOP command. Since no effective access to the memory cell array 11 ismade, the problem of executing an erroneous command or overwriting thememory cell array 11 with erroneous data is avoided.

Preferred embodiments of the present invention will be explained belowin detail with reference to the accompanying drawings.

Turning to FIG. 3, the access control circuit 20 includes receivers 111and 112. The receiver 111 receives the chip select signal CS suppliedfrom the controller 50 and generates an internal chip select signalICS1. The receiver 112 receives the address signal ADD, the commandsignal CMD, and the verification signal PRTY supplied from thecontroller 50 and generates an internal address signal IADD1, aninternal command signal ICMD1, and an internal verification signalIPRTY. The internal address signal IADD1, the internal command signalICMD1, and the internal verification signal IPRTY are all supplied tothe verification circuit 90.

In the present embodiment, the verification signal PRTY is a parity bitwhich indicates whether the number of high-level bits among theplurality of bits constituting the address signal ADD and the commandsignal CMD is an even number or an odd number. Specifically, if thenumber of high-level bits among the plurality of bits constituting theaddress signal ADD and the command signal CMD is an even number, theverification signal PRTY becomes a low level. If the number ofhigh-level bits is an odd number, the verification signal PRTY becomes ahigh level. Therefore, the plurality of bits including the addresssignal ADD, the command signal CMD, and the verification signal PRTYmust always include an even number of high-level bits. If the number ofhigh-level bits is an odd number, it means that either the addresssignal ADD or the command signal CMD is erroneous.

Turning to FIG. 4, the verification circuit 90 calculates exclusive ORsof the plurality of bits constituting the address signal ADD and thecommand signal CMD and the bit constituting the verification signal PRTYby two bits. The verification circuit 90 further calculates exclusiveORs of the resultants to finally obtain a 1-bit calculation result. Anexclusive OR operation produces a low level if two input bits coincidewith each other (i.e., if the number of high-level bits is an evennumber), and a high level if the two input bits do not coincide witheach other (i.e., if the number of high-level bits is an odd number). Ifthe final result bit is at a low level, it shows that the number ofhigh-level bits in the plurality of input bits is an even number. On theother hand, if the final result bit is at a high level, it shows thatthe number of high-level bits in the plurality of input bits is an oddnumber. The bit finally resulting from the verification circuit 90constitutes a parity error signal PERR. The parity error signal PERR ofhigh level indicates the occurrence of an error. In the presentembodiment, the parity error signal PERR may be referred to as a“verification result signal”. The parity error signal PERR is suppliedto a parity latency circuit 100, an error processing circuit 120, anerror register 130, and the like shown in FIG. 3.

The parity latency circuit 100 retains the internal chip select signalICS1, the internal address signal IADD1, and the internal command signalICMD1 as long as needed for the verification circuit 90 to perform aparity check (i.e., as long as a verification period, or paritylatency). After a lapse of the parity latency, the parity latencycircuit 100 outputs the retained signals as an internal chip selectsignal PCS, an internal address signal PADD, and an internal commandsignal PCMD, respectively. In the present embodiment, the parity latencycircuit 100 may be referred to as a “second circuit”. The node of theparity latency circuit 100 for inputting the internal chip select signalICS1 may be referred to as a “third input node”. The node of the paritylatency circuit 100 for inputting the internal command signal ICMD1 maybe referred to as a “fourth input node”.

The error processing circuit 120 is a circuit that performs errorprocessing when the parity error signal PERR is activated to a highlevel. The content of the error processing is not limited in particular.Examples include processing for forcefully deactivating the memory cellarray 11. The memory cell array 11 may be deactivated by restoring thememory cell array in which a word line WL is selected by an activecommand to a precharge state, i.e., restoring all the word lines WL toan inactive state. If the memory cell array 11 is divided into aplurality of banks, all the banks are preferably put into an inactivestate. Deactivating the memory cell array 11 in the presence of a parityerror prevents the data retained in the memory cell array 11 from beingdamaged by an erroneous command or an erroneous address.

In the present embodiment, when the parity error signal PERR isactivated, the error processing circuit 120 generates an alert signalALRT. The alert signal ALRT is output to outside through a driver 113.The alert signal ALRT output outside is supplied to the controller 50,whereby the controller 50 is informed of the occurrence of the parityerror.

The error register 130 is a circuit that retains the address signal ADDand the command signal CMD pertaining to the parity error when theparity error signal PERR is activated to a high level. In fact, theerror register 130 retains an internal address signal PADDm1 and aninternal command signal PCMDm1 which are intermediate products of thedelaying by the parity latency circuit 100. The internal address signalPADDm1 and the internal command signal PCMDm1 retained in the errorregister 130 are output to outside through the data input/output circuit30. The internal address signal PADDm1 and the internal command signalPCMDm1 output outside are supplied to the controller 50, whereby thecontroller 50 is informed of which address signal ADD or command signalCMD has caused the parity error.

Turning to FIG. 5, the parity latency circuit 100 has a latency of fiveclock cycles. The latency need not be fixed and may be variabledepending on a mode setting. The mode setting is performed by setting apredetermined mode signal into a mode register 25 shown in FIG. 3. Setvalues of the mode register 25 include a set value about whether toenable or disable a parity check on the address signal ADD and thecommand signal CMD. If an operation mode for enabling the parity check(parity ON mode) is set, a mode signal PEN is activated to a high level,for example. If an operation mode for disabling the parity check (parityOFF mode) is set, the mode signal PEN is deactivated to a low level, forexample.

The parity latency circuit 100 uses an internal clock signal ICLK, whichis generated based on an external clock signal supplied from thecontroller 50. In the present example, five stages of shift registersare provided on the path that receives the internal chip select signalICS1 and outputs the internal chip select signal PCS. The internal chipselect signal PCS is thus output five clock cycles after the receptionof the internal chip select signal ICS1. The same holds for the internalcommand signal ICMD1 and the internal address signal IADD1, which areoutput through five stages of shift registers as the internal commandsignal PCMD and the internal address signal PADD, respectively.

In the parity latency circuit 100 shown in FIG. 5, the path for countingthe internal chip select signal ICS1 includes an AND gate circuit G1.The AND gate circuit G1 is inserted between the output node of theflip-flop circuit FF4 at the fourth stage and the input node of theflip-flop circuit FF5 at the fifth stage. If the parity error signalPERR is at a low level, the AND gate circuit G1 simply supplies a signalPCSm1 a output from the flip-flop circuit FF4 at the fourth stage to theflip-flop circuit FF5 at the fifth stage. On the other hand, if theparity error signal PERR is at a high level, the AND gate circuit G1forcefully deactivates its signal PCSm1, which is supplied to theflip-flop circuit FF5 at the fifth stage, to a low level regardless ofthe signal PCSm1 output from the flip-flop circuit FF4 at the fourthstage.

In the present example, the parity check by the verification circuit 90needs to be completed before the flip-flop circuit FF5 at the fifthstage latches the signal PCSm1. If the parity check by the verificationcircuit 90 shows the absence of a parity error, the internal chip selectsignal PCS is properly output at the fifth clock cycle. On the otherhand, if the parity check by the verification circuit 90 shows theoccurrence of a parity error, the internal chip select signal PCS outputat the fifth clock cycle is forcefully deactivated to a low level. Inother words, the corresponding command is converted into a DESELcommand.

Meanwhile, the internal command signal ICMD1 and the internal addresssignal IADD1 are output as the internal command signal PCMD and theinternal address signal PADD at the fifth clock cycle regardless of theresult of the parity check. Note that the signals PCMDm1 and PADDm1output from the flip-flop circuits FF4 at the fourth stages are suppliedto the foregoing error register 130. The same holds for an internalverification signal PPRTYm1 which is synchronous with the signals PCMDm1and PADDm1.

The internal chip select signal PCS output from the parity latencycircuit 100 is input to one of the input nodes of a selector 141 shownin FIG. 3. The internal chip select signal ICS1 not passed through theparity latency circuit 100 is supplied to the other input node of theselector 141. In the present embodiment, the selector 141 may bereferred to as a “third circuit”.

The selector 141 outputs either one of the signals PCS and ICS1 as aninternal chip select signal ICS2 based on the mode signal PEN.Specifically, if the mode signal PEN is activated to a high level (setto the parity ON mode), the internal chip select signal PCS is selected.If the mode signal PEN is deactivated to a low level (set to the parityOFF mode), the internal chip select signal ICS1 is selected. Theinternal chip select signal ICS2 output as the result of selection issupplied to a first input node of a circuit block 80. The circuit block80 is a circuit block that includes the address latch circuit 80 a andthe command decoder 80 b shown in FIG. 1. The circuit block 80 isactivated based on the internal chip select signal ICS2.

Similarly, the internal command signal PCMD and the internal addresssignal PADD output from the parity latency circuit 100 are input to oneof the input nodes of a selector 142. The internal command signal ICMD1and the internal address signal IADD1 not passed through the paritylatency circuit 100 are supplied to other input node of the selector142. In the present embodiment, the selector 142 may be referred to as a“fourth circuit”.

The selector 142 outputs either pair of the signals as an internalcommand signal ICMD2 and an internal address signal IADD2 based on themode signal PEN. Specifically, if the mode signal PEN is activated to ahigh level (set to the parity ON mode), the internal command signal PCMDand the internal address signal PADD are selected. If the mode signalPEN is deactivated to a low level (set to the parity OFF mode), theinternal command signal ICMD1 and the internal address signal IADD1 areselected. The internal command signal ICMD2 and the internal addresssignal IADD2 output as the result of selection are supplied to a secondinput node of the circuit block 80. Consequently, the internal addresssignal IADD2 is latched into the address latch circuit 80 a, and theinternal command signal ICMD2 is decoded by the command decoder 80 b.The internal address signal IADD2 latched into the address latch circuit80 a is output as an internal address signal IADD3, which is supplied tothe row decoder 12 and the column decoder 13 shown in FIG. 1. Thecommand decoder 80 b decodes the internal command signal ICMD2 togenerate an internal command signal ICMD3. Circuit blocks such as therow decoder 12 and the column decoder 13 are controlled by the internalcommand signal ICMD3.

The internal command signal ICMD3 includes a plurality of signals formaking an effective access to the memory cell array, such as an activesignal IACT for making a row access, a read signal IRD1 for performing aread operation, and a write signal IWR1 for performing a writeoperation. Any one of the signals is activated according to the internalcommand signal ICMD2. The internal command signal ICMD3 further includesan internal command DESEL for making no access to the memory cell array.When the internal chip select signal ICS2 is deactivated, the internalcommand DESEL is activated regardless of the internal command signalICMD2.

The essential circuit configuration of the semiconductor device 10 aaccording to the present embodiment has been described so far. Next, theoperation of the semiconductor device 10 a according to the presentembodiment will be described.

FIGS. 6A and 6B are timing charts for explaining the operation of thesemiconductor device shown in FIG. 3. In FIGS. 6A and 6B, a /ICLKrepresents an inverted signal of an internal clock signal ICLK.

Referring to FIG. 6A, in the parity OFF mode, the mode signal PEN isdeactivated to a low level. The selector 141 therefore selects theinternal chip select signal ICS1. The selector 142 selects the internalcommand signal ICMD1 and the internal address signal IADD1. As shownFIG. 6A, the internal chip select signal ICS1, the internal commandsignal ICMD1, and the internal address signal IADD1 are simply suppliedto the circuit block 80 as the internal chip select signal ICS2, theinternal command signal ICMD2, and the internal address signal IADD2.The circuit block 80 performs a decoding operation of the internalcommand signal ICMD2 and a latch operation of the internal addresssignal IADD2. Consequently, the internal command signal ICMD3 and theinternal address signal IADD3 are output without a wait for the paritylatency, and an operation based on the signals is immediately performed.

Turning to FIG. 6B, in the parity ON mode, the mode signal PEN isactivated to a high level. The selector 141 therefore selects theinternal chip select signal PCS. The selector 142 selects the internalcommand signal PCMD and the internal address signal PADD. In the exampleshown in FIG. 6B, the internal chip select signal ICS1, the internalcommand signal ICMD1, and the internal address signal IADD1 occur attimes t11, t12, and t13.

Suppose that the internal command signal ICMD1 and the internal addresssignal IADD1 occurring at time t11 include an odd number of high-levelbits and an even number of high-level bits, respectively. The totalnumber of high-level bits is an odd number. Since the correspondinginternal verification signal IPRTY is correctly at a high level, theverification circuit 90 deactivates the parity error signal PERR to alow level. The level of the parity error signal PERR is settled at thetiming the fourth clock cycle (parity latency−1) from time t11. After alapse of five clock cycles since time t11, the parity latency circuit100 outputs the internal chip select signal PCS, the internal commandsignal PCMD, and the internal address signal PADD. Consequently, theinternal command signal ICMD3 and the internal address signal IADD3 areoutput, and an operation based on the signals is performed.

The internal command signal ICMD1 and the internal address signal IADD1occurring at time t12 include an even number of high-level bits each.The total number of high-level bits is also an even number. Since thecorresponding internal verification signal IPRTY is correctly at a lowlevel, the verification circuit 90 deactivates the parity error signalPERR to a low level. The level of the parity error signal PERR issettled at the timing the fourth clock cycle (parity latency−1) fromtime t12. After a lapse of five clock cycles since time t12, the paritylatency circuit 100 outputs the internal chip select signal PCS, theinternal command signal PCMD, and the internal address signal PADD.Consequently, the internal command signal ICMD3 and the internal addresssignal IADD3 are output, and an operation based on the signals isperformed.

Now, the internal command signal ICMD1 and the internal address signalIADD1 occurring at time t13 include an odd number of high-level bits andan even number of high-level bits, respectively. The total number ofhigh-level bits is an odd number. In the present example, the internalverification signal IPRTY is at a low level whereas the internalverification signal IPRTY is supposed to be at a high level. Theverification circuit 90 therefore activates the parity error signal PERRto a high level. The level of the parity error signal PERR is settled atthe timing the fourth clock cycle (parity latency−1) from time t13.After a lapse of five clock cycles since time t13, the parity latencycircuit 100 outputs the internal command signal PCMD and the internaladdress signal PADD. The internal chip select signal PCS is deactivatedto a low level. In other words, the semiconductor device 10 a enters thesame state as when a DESEL command is issued.

Consequently, the address latch circuit 80 a and the command decoder 80b make no operation, nor is the memory cell array 11 accessed. Thismeans that if the access A started at time t11 and the access B startedat time t12 are still in process, the accesses A and B will not bestopped or changed. The accesses A and B are therefore normallyexecuted.

The internal command signal ICMD1 and the internal address signal IADD1occurring at time t13 are taken into the error register 130. Inaddition, the error processing circuit 120 generates the alert signalALRT. The controller 50 is thus informed of the occurrence of the parityerror and which command signal CMD or address signal ADD has caused theerror.

Next, a second embodiment of the present invention will be described.

Turning to FIG. 7, the same components as those shown in FIG. 3 will bedesignated by like reference numbers. Redundant description thereof willbe omitted.

As shown in FIG. 7, according to the present embodiment, a CA latencycircuit 150 and a receiver control circuit 160 are added to the accesscontrol circuit 20. The CA latency circuit 150 is a circuit that delaysthe internal chip select signal ICS1 by predetermined clock cycles andoutputs the resultant as an internal chip select signal CCS. In thepresent embodiment, the CA latency circuit 150 may be referred to as a“fifth circuit”. The internal chip select signal CCS is supplied toselectors 141 b and 143. In the present embodiment, the selector 143 maybe referred to as a “sixth circuit”. The receiver control circuit 160 isa circuit that generates an enable signal REN based on the internal chipselect signal ICS1 and a reset signal RST. The enable signal REN issupplied to the receiver 112 and controls the operation of the receiver112.

Turning to FIG. 8, the CA latency circuit 150 has a latency of threeclock cycles. The latency need not be fixed and may be variabledepending on a mode setting. The mode setting is performed by setting apredetermined mode signal into the mode register 25 shown in FIG. 3. Setvalues of the mode register 25 include a set value about whether toenable or disable a CA latency operation. If an operation mode forenabling a CA latency operation (CALON mode) is set, a mode signal CALENis activated to a high level, for example. If an operation mode fordisabling a CA latency operation (CALOFF mode) is set, the mode signalCALEN is deactivated to a low level, for example.

The CA latency circuit 150 shown in FIG. 8 includes three stages ofshift registers which are arranged on the path that receives theinternal chip select signal ICS1 and outputs the internal chip selectsignal CCS. As a result, the internal chip select signal CCS is outputafter a lapse of three clock cycles since the reception of the internalchip select signal ICS1. The internal chip select signal ICS1, theoutput signal CCSm2 of the flip-flop circuit FF11 at the first stage,and the output signal CCSm1 of the flip-flop circuit FF12 at the secondstage are supplied to a NOR gate circuit G2. The output signal G2 a ofthe NOR gate circuit G2 and the output signal (internal chip selectsignal) CCS of the flip-flop circuit FF13 at the third stage aresupplied to an AND gate circuit G3. The output of the AND gate circuitG3 is supplied to a flip-flop circuit FF14. With such a configuration,the reset signal RST is activated to a high level at the fourth clockcycle if the internal chip select signal ICS1 has not been activated toa high level for three clock cycles. The reset signal RST is supplied tothe receiver control circuit 160.

The CA latency circuit 150 uses a shift clock that is generated by anAND gate circuit G0 ANDing the internal clock signal ICLK and the modesignal CALEN. The purpose for the use of such a shift clock is to stopthe shift operation for reduced power consumption when the CALOFF modeis selected.

Turning to FIG. 9, the receiver control circuit 160 includes an SR latchcircuit L. A NOR gate circuit G1 receives the inverted signal of themode signal CALEN and the internal chip select signal ICS1. The outputof the NOR gate circuit G4 is supplied to a set node S of the SR latchcircuit L. The inverted signal of the reset signal RST is supplied to areset node R of the SR latch circuit L. With such a configuration, ifthe mode signal CALEN is activated to a high level, i.e., set to theCALON mode and the internal chip select signal ICS1 is activated, thenthe enable signal REN is immediately activated to a high level.Subsequently, when the reset signal RST is activated, the enable signalREN is deactivated to a low level. The activation timing of the resetsignal RST is as has been described with reference to FIG. 8. On theother hand, if the mode signal CALEN is deactivated to a low level,i.e., set to the CALOFF mode, the enable signal REN is constantlyactivated to a high level.

The enable signal REN is supplied to a receiver 112 shown in FIG. 7. Thereceiver 112 is activated in a period when the enable signal REN is at ahigh level, and deactivated when the enable signal REN is at a lowlevel. In the meantime, the receiver 111 which receives the chip selectsignal CS is constantly activated.

As shown in FIG. 7, the internal chip select signal ICS1 and theinternal chip select signal CCS passed through the CA latency controlcircuit 150 are supplied to the selector 143. The selector 143 selectseither one of the internal chip select signals ICS1 and CCS based on themode signal CALEN, and supplies the selected signal to the paritylatency circuit 100 as an internal chip select signal ICCS.Specifically, if the mode signal CALEN is deactivated to a low level,i.e., set to the CALOFF mode, the selector 141 selects the internal chipselect signal ICS1. If the mode signal CALEN is activated to a highlevel, i.e., set to the CALON mode, the selector 143 selects theinternal chip select signal CCS.

The internal chip select signals ICS1, CCS, and PCS are supplied to theselector 141 b. The selector 141 b selects any one of the internal chipselect signals ICS1, CCS, and PCS according to the truth table shown inFIG. 10, and outputs the selected signal to the circuit block 80 as aninternal chip select signal ICS2.

The configuration of the semiconductor device 10 b according to thesecond embodiment has been described so far. In other respects, theconfiguration of the semiconductor device 10 b is basically the same asthat of the semiconductor device 10 a according to the first embodiment.Next, the operation of the semiconductor device 10 b according to thepresent embodiment will be described.

FIGS. 11 to 14 are timing charts for explaining the operation of thesemiconductor device 10 b according to the present embodiment.

Turning to FIG. 11, when the CALOFF mode and the parity OFF mode areset, the operations are the same as those shown in FIG. 6A. Morespecifically, the controller 50 simultaneously issues the chip selectsignal CS, the command signal CMD, and the address signal ADD, based onwhich an operation is immediately performed. If the CALOFF mode is set,the SR latch circuit L included in the receiver control circuit 160shown in FIG. 9 is always set to activate the receiver 112 all the time.

Turning to FIG. 12, when the CALON mode and the parity OFF mode are set,the timing of the issuance of the chip select signal CS from thecontroller 50 is not the same as that of the command signal CMD and theaddress signal ADD. The command signal CMD and the address signal ADDare issued after a lapse of the CAL latency since the issuance of thechip select signal CS. FIG. 12 shows a case where the CAL latency is setto three clock cycles.

As shown in FIG. 12, when the chip select signal CS is issued, theinternal chip select signal ICS1 changes to a high level and thus theenable signal REN is activated to a high level. Consequently, thereceiver 112 which has been deactivated are activated to allow thereception of the address signal ADD and the command signal CMD. It takessome time to change the first input stage of the receiver 112 from aninactive state to an active state. In FIG. 12, the gentle change of theenable signal REN represents the time needed.

The internal chip select signal ICS1 is passed through the flip-flopcircuits FF11 to FF13 included in the CA latency circuit 150 and outputas the internal chip select signal CCS three clock cycles later. Theactivation timing of the internal chip select signal CCS is insynchronization with the timing when the command signal CMD and theaddress signal ADD are issued from the controller 50. As a result, thecommand signal CMD and the address signal ADD are processed by theaddress latch circuit 80 a and the command decoder 80 b included in thecircuit block 80.

After a lapse of a clock cycle since the activation of the internal chipselect signal CCS, the reset signal RST is activated. This resets the SRlatch circuit L included in the receiver control circuit 160, wherebythe receiver 112 returns to an inactive state and the power consumptionof the receiver 112 is reduced.

Turning to FIG. 13, when the CALOFF mode and the parity ON mode are set,the operations are the same as those shown in FIG. 6B. In the exampleshown in FIG. 13, the chip select signal CS, the command signal CMD, andthe address signal ADD are issued at times t21 and t22.

Suppose that the command signal CMD and the address signal ADD suppliedat times t21 and t22 include an odd number of high-level bits and aneven number of high-level bits, respectively. The total numbers ofhigh-level bits are odd numbers, and the corresponding correctverification signal PRTY is at a high level. The verification signalPRTY supplied for the command signal CMD and the address signal ADDissued at time t21 is correctly at a high level. On the other hand, theverification signal PRTY supplied for the command signal CMD and theaddress signal ADD issued at time t22 is at a low level. In response tothis, the verification circuit 90 activates the parity error signal PERRto a high level. The activation of the parity error signal PERRdeactivates the internal chip select signal PCS to a low level, whichresults in the same state as when a DESEL command is issued. The commandsignal CMD and the address signal ADD issued at time t22 are taken intothe error register 130. The alert signal ALRT occurs.

Turning to FIG. 14, when the CALON mode and the parity ON mode are set,the operations shown in FIGS. 12 and 13 are combined. More specifically,the command signal CMD and the address signal ADD are issued after alapse of the CAL latency since the issuance of the chip select signalCS. The issued command signal CMD and address signal ADD are subjectedto a parity check. In the example shown in FIG. 14, the chip selectsignal CS is issued at times t31 and t32. The corresponding commandsignal CMD and address signal ADD are issued after a lapse of threeclock cycles since times t31 and t32.

Like the example shown in FIG. 13, the command signal CMD and theaddress signal ADD supplied after a lapse of three clock cycles sincetimes t31 and t32 include an odd number of high-level bits and an evennumber of high-level bits, respectively. The total numbers of high-levelbits are odd numbers, and the corresponding correct verification signalPRTY is at a high level. However, the verification signal PRTY suppliedafter a lapse of three clock cycles since time t32 is at a low level, sothat the verification circuit 90 activates the parity error signal PERRto a high level. The command signal CMD and the address signal ADD aretaken into the error register 130. The alert signal ALRT occurs.

As described above, the semiconductor device 10 b according to thepresent embodiment has the CALON mode. In addition to the effects of thesemiconductor device 10 a according to the first embodiment, it istherefore possible to activate the receiver 112 at the issuance timingof the address signal ADD and the command signal CMD. In other words,the receiver 112 can be put into an inactivate state for reduced powerconsumption at timing when the address signal ADD and the command signalCMD are not issued.

Next, a third embodiment of the present invention will be described.

Turning to FIG. 15, according to the present embodiment, the paritylatency circuit 100, the CA latency circuit 150, and the selector 141 bshown in FIG. 7 are replaced with a parity latency circuit 100 c, a CAlatency circuit 150 c, and a selector 141 c, respectively. In otherrespects, the present embodiment is the same as the semiconductor device10 b shown in FIG. 7. The same components will thus be designated bylike reference numerals. Redundant description will be omitted.

Turning to FIG. 16, the parity latency circuit 100 c is configured sothat the flip-flop circuit FF5 and the AND gate circuit G1 included inthe parity latency circuit 100 shown in FIG. 5 are eliminated. Instead,a logic gate circuit G5 is inserted between flop-flop circuits FF24 andFF25. In FIG. 16, the logic gate circuit G5 is represented by the symbolmark of an AND gate circuit. Such a representation corresponds to thefact that the command signal CMD, as will be described later, is handledas a NOP command if all the bits (ACT, RAS, CAS, and WE) constitutingthe command signal CMD are at a low level.

The logic gate circuit G5 is a circuit that receives the output signalsof the flip-flop circuits FF4 and FF24 and the parity error signal PERR.The logic gate circuit G5 logically synthesizes the signals into asignal PCMDm1_2 (synthesis signal) and outputs the signal PCMDm1_2 tothe flip-flop circuit FF25. If the output of the flip-flop circuit FF4,i.e., the internal chip select signal PCSm1 a is at a high level and theparity error signal PERR is at a low level, the logic gate circuit G5simply supplies an internal command signal PCMDm1 a output from theflip-flop circuit FF24 to the flip-flop circuit FF25. In other words, ifthe semiconductor device 10 c is selected and there is no parity error,the internal command signal is allowed to pass.

On the other hand, if the internal chip select signal PCSm1 a is at alow level or the parity error signal PERR is at a high level, the logicgate circuit G5 supplies a NOP command to the flip-flop circuit FF25regardless of the content of the internal command signal PCMDm1 a outputfrom the flip-flop circuit FF24. In other words, if the semiconductordevice 10 c is not selected or there is a parity error, the internalcommand signal is forcefully converted into a NOP command.

Turning to FIG. 17, the CA latency circuit 150 c includes two flip-flopcircuits FF13 a and FF13 b connected in parallel instead of theflip-flop circuit FF13 which is included in the CA latency circuit 150shown in FIG. 9. The output of the flip-flop circuit FF13 a is used asan internal chip select signal CPCS. The output of the flip-flop circuitFF13 b is used as the internal chip select signal CCS. The flip-flopcircuit FF13 b has a set node SN to which the mode signal PEN is input.If the mode signal PEN is at a high level (parity ON mode), the internalchip select signal CCS is thus fixed to a high level. As shown in FIG.15, the internal chip select signal CCS is supplied to the selector 141c. The internal chip select signal CPCS is supplied to the selector 143.

The selector 141 c selects either one of the internal chip selectsignals ICS1 and CCS according to the truth table shown in FIG. 18, andoutputs the selected signal to the circuit block 80 as the internal chipselect signal ICS2.

In the present embodiment, the internal command signal ICMD3 output fromthe circuit block 80 includes an internal command INOP which is intendedto maintain the state of the memory cell array. The internal commandINOP is generated when the internal command signal ICMD2 indicates a NOPcommand.

The configuration of the semiconductor device 10 c according to thethird embodiment has been described so far. In other respects, theconfiguration of the semiconductor device 10 c is basically the same asthat of the semiconductor device 10 b according to the secondembodiment. Next, the operation of the semiconductor device 10 caccording to the present embodiment will be described.

FIGS. 19 to 22 are timing charts for explaining the operation of thesemiconductor device 10 c according to the present embodiment.

Turning to FIG. 19, when the CALOFF mode and the parity OFF mode areset, the operations are basically the same as those shown in FIG. 11.More specifically, the controller 50 simultaneously issues the chipselect signal CS, the command signal CMD, and the address signal ADD,based on which an operation is immediately performed. When the CALOFFmode is set, the enable signal REN is fixed to a high level and thereceiver 112 is activated all the time.

Turning to FIG. 20, when the CALON mode and the parity OFF mode are set,the operations are basically the same as those shown in FIG. 12. Morespecifically, the command signal CMD and the address signal ADD areissued after a lapse of the CAL latency since the issuance of the chipselect signal CS. In response to the activation of the chip selectsignal CS, the enable signal REN changes to a high level, whereby thereceiver 112 which has been deactivated is activated. The command signalCMD and the address signal ADD are subsequently issued after a lapse ofthe CAL latency, and the receiver 112 can properly receive the signals.

Turning to FIG. 21, when the CALOFF mode and the parity ON mode are set,a parity check is performed. Suppose that the command signal CMD and theaddress signal ADD supplied at times t41 and t42 includes an odd numberof high-level bits and an even number of high-level bits, respectively.The total numbers of high-level bits are odd numbers, and thecorresponding correct verification signal PRTY is at a high level. Theverification signal PRTY supplied for the command signal CMD and theaddress signal ADD issued at time t41 is correctly at a high level. Onthe other hand, the verification signal PRTY supplied for the commandsignal CMD and the address signal ADD issued at time t42 is at a lowlevel. In response to this, the verification circuit 90 activates theparity error signal PERR to a high level.

When the parity error signal PERR is at a high level, the logic gatecircuit G5 shown in FIG. 16 outputs a NOP command regardless of theinput command. The command signal CMD issued at time t42 is thusconverted into a NOP command by the parity latency circuit 100 c. TheNOP command is supplied to the command decoder 80 b. Consequently, theinternal circuits such as the row decoder 12 and the column decoder 13maintain their current state. The command signal CMD and the addresssignal ADD are taken into the error register 130. The alert signal ALRToccurs.

Turning to FIG. 22, when the CALON mode and the parity ON mode are set,the operations shown in FIGS. 20 and 21 are combined. More specifically,the command signal CMD and the address signal ADD are issued after alapse of the CAL latency since the issuance of the chip select signalCS. The issued command signal CMD and address signal ADD are subjectedto a parity check. In the example shown in FIG. 22, the chip selectsignal CS is issued at times t51 and t52. The corresponding commandsignal CMD and address signal ADD are issued after a lapse of threeclock cycles since times t51 and t52.

Like the example shown in FIG. 22, the command signal CMD and theaddress signal ADD supplied after a lapse of three clock cycles sincetimes t51 and t52 include an odd number of high-level bits and an evennumber of high-level bits, respectively. The total numbers of high-levelbits are odd numbers, and the corresponding correct verification signalPRTY is at a high level. The verification signal PRTY supplied after alapse of three clock cycles since time t52 is at a low level, so thatthe verification circuit 90 activates the parity error signal PERR to ahigh level. As a result, the command signal CMD that is issued after alapse of three clock cycles since time t52 is converted into a NOPcommand. The command signal CMD and the address signal ADD are takeninto the error register 130. The alert signal ALRT occurs.

As described above, the semiconductor device 10 c according to thepresent embodiment converts an issued command into a NOP command ifthere occurs a parity error. The internal circuits such as the rowdecoder 12 and the column decoder 13 are therefore prevented from makingan operation based on an erroneous address signal ADD or an erroneouscommand signal CMD.

Next, a fourth embodiment of the present invention will be described.

Turning to FIG. 23, the parity latency circuit 100 d used in the presentembodiment is configured so that the flip-flop circuits FF2 to FF4included in the parity latency circuit 100 c shown in FIG. 16 areeliminated. Instead, a logic gate circuit G6 is inserted between theflip-flop circuits FF21 and FF22. In FIG. 23, the logic gate circuit G6is represented by the symbol mark of an AND gate circuit. The reason isthe same as why the foregoing logic gate circuit G5 is represented bythe symbol mark of an AND gate circuit.

The logic gate circuit G6 is a circuit that receives the output signalPCSm4 of the flip-flop circuit FF1 and the output signal PCMDm4 a of theflip-flop circuit FF21. The logic gate circuit G6 logically synthesizesthe signals into a signal PCMDm4 (first synthesis signal) and outputsthe first synthesis signal PCMDm4 to the flip-flop circuit FF22. If theoutput of the flip-flop circuit FF1, i.e., the internal chip selectsignal PCSm4 is at a high level, the logic gate circuit G6 simplysupplies the internal command signal PCMDm4 a output from the flip-flopcircuit FF21 to the flip-flop circuit FF22. On the other hand, if theinternal chip select signal PCSm4 is at a low level, the logic gatecircuit G6 supplies a NOP command to the flip-flop circuit FF22regardless of the content of the internal command signal PCMDm4 a outputfrom the flip-flop circuit FF21.

A logic gate circuit G7 is inserted between the flip-flop circuits FF24and FF25 instead of the logic gate circuit G5. In FIG. 23, the logicgate circuit G7 is represented by the symbol mark of an AND gate circuitfor the same reason as the foregoing.

The logic gate circuit G7 is a circuit that receives the output signalPCMDm1 of the flip-flop circuit FF24 and the parity error signal PERR.The logic gate circuit G7 logically synthesizes the signals into asignal PCMDm1_2 (second synthesis signal) and outputs the secondsynthesis signal PCMDm1_2 to the flip-flop circuit FF25. If the parityerror signal PERR is at a low level, i.e., there is no parity error, thelogic gate circuit G7 simply supplies the internal command signal PCMDm1output from the flip-flop circuit FF24 to the flip-flop circuit FF25. Onthe other hand, if the parity error signal PERR is at a high level,i.e., there occurs a parity error, the logic gate circuit G7 supplies aNOP command to the flip-flop circuit FF25 regardless of the content ofthe internal command signal PCMDm1 output from the flip-flop circuitFF24.

As described above, according to the present embodiment, if the internalchip select signal ICCS is at a low level, i.e., the semiconductordevice is in an unselected state, the internal command signal isconverted into a NOP command at an earlier stage. This can reduce thenumber of stages of flip-flop circuits that shift the internal chipselect signal. Consequently, the circuit scale can be reduced with afurther reduction in power consumption.

It is apparent that the present invention is not limited to the aboveembodiments, but may be modified and changed without departing from thescope and spirit of the invention.

For example, the foregoing embodiments have dealt with the cases ofverifying the entire logic of the command signal CMD and the addresssignal ADD. However, the present invention is not limited thereto. Thelogic of only the command signal CMD may be verified. The logic of onlythe address signal ADD may be verified.

Volatile memories, non-volatile memories, or mixtures of them can beapplied to the memory cells of the present invention.

The technical concept of the present invention is not limited to asemiconductor device including memory cells, and may be applied to asemiconductor device including a signal transmission circuit. The formsof the circuits in the circuit blocks disclosed in the drawings andother circuits for generating the control signals are not limited to thecircuit forms disclosed in the embodiments.

When the transistors are field effect transistors (FETs), various FETsare applicable, including MIS (Metal Insulator Semiconductor) and TFT(Thin Film Transistor) as well as MOS (Metal Oxide Semiconductor). Thedevice may even include bipolar transistors. For example, the presentinvention can be applied to a general semiconductor device such as a CPU(Central Processing Unit), an MCU (Micro Control Unit), a DSP (DigitalSignal Processor), an ASIC (Application Specific Integrated Circuit),and an ASSP (Application Specific Standard Circuit), each of whichincludes a memory function. An SOC (System on Chip), an MCP (Multi ChipPackage), and a POP (Package on Package) and so on are pointed to asexamples of types of semiconductor device to which the present inventionis applied. The present invention can be applied to the semiconductordevice that has these arbitrary product form and package form.

When the transistors that constitute a logic gate and the like are fieldeffect transistors (FETs), various FETs are applicable, including MIS(Metal Insulator Semiconductor) and TFT (Thin Film Transistor) as wellas MOS (Metal Oxide Semiconductor). The device may even include bipolartransistors.

In addition, an NMOS transistor (N-channel MOS transistor) is arepresentative example of a first conductive transistor, and a PMOStransistor (P-channel MOS transistor) is a representative example of asecond conductive transistor.

Many combinations and selections of various constituent elementsdisclosed in this specification can be made within the scope of theappended claims of the present invention. That is, it is needles tomention that the present invention embraces the entire disclosure ofthis specification including the claims, as well as various changes andmodifications which can be made by those skilled in the art based on thetechnical concept of the invention.

In addition, while not specifically claimed in the claim section, theapplicant reserves the right to include in the claim section of theapplication at any appropriate time the following devices andinformation processing systems:

A1. A semiconductor device comprising:

a memory cell array that includes a plurality of memory cells; and

an access control circuit that receives an address signal indicating anaddress of at least one of the memory cells to be accessed and a commandsignal indicating an access type, and accessing the memory cell arraybased on the address signal and the command signal, wherein

the access control circuit includes a verification circuit that verifiesthe address signal and the command signal based on a verification signalsupplied from outside, and

the verification circuit stops accessing the memory cell array indicatedby the command signal when the address signal or the command signal isdetermined to be erroneous.

A2. The semiconductor device as described in A1, wherein theverification circuit converts the access type indicated by the commandsignal into a different access type when the address signal or thecommand signal is determined to be erroneous.

A3. The semiconductor device as described in A2, wherein the accesscontrol circuit is activated when a chip select signal supplied fromoutside is in a first logic level, and deactivated when the chip selectsignal is in a second logic level.

A4. The semiconductor device as described in A1 or A3, wherein when theaddress signal or the command signal is determined to be erroneous, theverification circuit changes the chip select signal in the first logiclevel supplied from outside into the second logic level, therebyconverting the access type indicated by the command signal into adifferent access type.

A5. The semiconductor device as described in A1 or A3, wherein when theaddress signal or the command signal is determined to be erroneous, theverification circuit changes the access type indicated by the commandsignal supplied from outside into a NOP command for making no access tothe memory cell array.

A6. The semiconductor device as described in A3 or A4, wherein theaccess control circuit further includes a latency circuit that delaysthe chip select signal by a predetermined period, and the verificationcircuit verifies the address signal and the command signal output fromoutside the predetermined period after the chip select signal issupplied from outside.

A7. An information processing system comprising:

a semiconductor device that includes a memory cell array including aplurality of memory cells; and

a controller that controls the semiconductor device, wherein

the controller includes an output circuit that supplies an addresssignal indicating an address of at least one of a memory cells to beaccessed, a command signal indicating an access type, and a verificationsignal generated based on the address signal and the command signal tothe semiconductor device,

the semiconductor device includes an access control circuit thataccessing the memory cell array based on the address signal and thecommand signal,

the access control circuit includes a verification circuit that verifiesthe address signal and the command signal based on the verificationsignal, and

the verification circuit stops accessing the memory cell array indicatedby the command signal when the address signal or the command signal isdetermined to be erroneous.

A8. The information processing system as described in A7, wherein theverification circuit converts the access type indicated by the commandsignal into a different access type when the address signal or thecommand signal is determined to be erroneous.

A9. The information processing system as described in A8, wherein theoutput circuit further supplies a chip select signal to thesemiconductor device, and the access control circuit is activated whenthe chip select signal is in a first logic level, and deactivated whenthe chip select signal is in a second logic level.

A10. The information processing system as described in A7 or A9, whereinwhen the address signal or the command signal is determined to beerroneous, the verification circuit changes the chip select signal inthe first logic level supplied from the controller into the second logiclevel, thereby converting the access type indicated by the commandsignal into a different access type.

A11. The information processing system as described in A7 or A9, whereinwhen the address signal or the command signal is determined to beerroneous, the verification circuit changes the access type indicated bythe command signal supplied from the controller into a NOP command formaking no access to the memory cell array.

A12. The information processing system as described in A9 or A10,wherein

the output circuit outputs the address signal and the command signal apredetermined period after outputting the chip select signal,

the access control circuit further includes a latency circuit thatdelays the chip select signal by the predetermined period, and

the verification circuit verifies the address signal and the commandsignal output from the controller the predetermined period after thechip select signal is supplied from the controller.

What is claimed is:
 1. A semiconductor device comprising: a commanddecoder; a verification circuit configured to receive a command signal,an address signal and a parity signal, and output an error signal whendetecting that at least one of the command signal and the address signalincludes an error; a command address latency circuit configured toreceive a chip select signal and output a first internal chip selectsignal; a first selector configured to receive the chip select signaland the first internal chip select signal and output a second internalchip select signal; a parity latency circuit configured to receive thesecond internal chip select signal, the command signal, and the addresssignal, and output a first internal command signal and a first internaladdress signal; and a second selector configured to receive the commandsignal, the address signal, the first internal command signal, and thefirst internal address signal, and output a second internal commandsignal and a second internal address signal to the command decoder. 2.The semiconductor device as claimed in claim 1, wherein the commandaddress latency circuit includes a first latch chain receiving the chipselect signal.
 3. The semiconductor device as claimed in claim 2,wherein the parity latency circuit includes a second latch chainreceiving the command signal and a third latch chain receiving theaddress signal.
 4. The semiconductor device as claimed in claim 1,wherein the parity latency circuit includes a first latch chainreceiving the command signal and a second latch chain receiving theaddress signal.
 5. The semiconductor device as claimed in claim 1,wherein the parity latency circuit is configured to receive the paritysignal and output an internal parity signal.
 6. The semiconductor deviceas claimed in claim 1, wherein the parity latency circuit includes afirst latch chain receiving the parity signal.
 7. The semiconductordevice as claimed in claim 1, wherein in a mode of operation whereparity is disabled the second selector outputs the command signal as thesecond internal command signal and the address signal as the secondinternal address signal.
 8. The semiconductor device as claimed in claim1, wherein in a mode of operation where parity is enabled the secondselector outputs the first internal command signal as the secondinternal command signal and the first internal address signal as thesecond internal address signal if the error signal indicates that thereis no error.
 9. The semiconductor device as claimed in claim 1, whereinin a mode of operation where parity is enabled the second selectoroutputs a NOP command signal as the second internal command signal ifthe error signal indicates that there is an error.
 10. The semiconductordevice as claimed in claim 1, wherein in a mode of operation wherecommand address latency is disabled the first selector outputs the chipselect signal as the second internal chip select signal.
 11. Thesemiconductor device as claimed in claim 1, wherein in a mode ofoperation where command address latency is enabled the first selectoroutputs the first internal chip select signal as the second internalchip select signal.
 12. The semiconductor device as claimed in claim 1,wherein the parity latency circuit is further configured to output athird internal chip select signal.
 13. The semiconductor device asclaimed in claim 12, further comprising: a third selector configured toreceive the chip select signal, the first internal chip select signaland the third internal chip select signal and output a fourth internalchip select signal to the command decoder.
 14. The semiconductor deviceas claimed in claim 13, wherein in a mode of operation where parity isdisabled and command address latency is disabled, the third selectoroutputs the chip select signal as the fourth internal chip selectsignal.
 15. The semiconductor device as claimed in claim 13, wherein ina mode of operation where parity is disabled and command address latencyis enabled, the third selector outputs the first internal chip selectsignal as the fourth internal chip select signal.
 16. The semiconductordevice as claimed in claim 13, wherein in a mode of operation whereparity is enabled, the third selector outputs the third internal chipselect signal as the fourth internal chip select signal.
 17. Thesemiconductor device as claimed in claim 13, wherein in a mode ofoperation where parity is enabled, the fourth internal chip selectsignal is disabled if the error signal indicates that there is an error.